JPH0354849B2 - - Google Patents
Info
- Publication number
- JPH0354849B2 JPH0354849B2 JP3179286A JP3179286A JPH0354849B2 JP H0354849 B2 JPH0354849 B2 JP H0354849B2 JP 3179286 A JP3179286 A JP 3179286A JP 3179286 A JP3179286 A JP 3179286A JP H0354849 B2 JPH0354849 B2 JP H0354849B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- crystal layer
- manufacturing
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000137 annealing Methods 0.000 claims description 36
- 238000010894 electron beam technology Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179286A JPS62190716A (ja) | 1986-02-18 | 1986-02-18 | 半導体薄膜結晶層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179286A JPS62190716A (ja) | 1986-02-18 | 1986-02-18 | 半導体薄膜結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62190716A JPS62190716A (ja) | 1987-08-20 |
| JPH0354849B2 true JPH0354849B2 (en]) | 1991-08-21 |
Family
ID=12340919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3179286A Granted JPS62190716A (ja) | 1986-02-18 | 1986-02-18 | 半導体薄膜結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190716A (en]) |
-
1986
- 1986-02-18 JP JP3179286A patent/JPS62190716A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62190716A (ja) | 1987-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0732124B2 (ja) | 半導体装置の製造方法 | |
| US4746803A (en) | Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same | |
| JPH0354849B2 (en]) | ||
| JP2653033B2 (ja) | 半導体単結晶層の製造方法 | |
| JPH0249534B2 (en]) | ||
| JPH057858B2 (en]) | ||
| JPH0132628B2 (en]) | ||
| JPH0241899B2 (en]) | ||
| JPH04380B2 (en]) | ||
| JPH0136970B2 (en]) | ||
| JPH0779081B2 (ja) | 半導体単結晶層の製造方法 | |
| JPH0440320B2 (en]) | ||
| JPH0136688B2 (en]) | ||
| JPS60210830A (ja) | 電子ビ−ムアニ−ル装置 | |
| JPH0351288B2 (en]) | ||
| JPH0339379B2 (en]) | ||
| JPS60152017A (ja) | 電子ビ−ムアニ−ル装置 | |
| JPH02101735A (ja) | 半導体単結晶層の製造方法 | |
| JP2526378B2 (ja) | 半導体単結晶層の製造方法 | |
| JPS63265419A (ja) | 半導体結晶層の製造方法 | |
| JPH031526A (ja) | 半導体単結晶層の製造方法 | |
| JPH0793264B2 (ja) | 半導体単結晶層の製造方法 | |
| JPH0440319B2 (en]) | ||
| JPS62179112A (ja) | Ｓｏｉ構造形成方法 | |
| JPS6092607A (ja) | 電子ビ−ムアニ−ル装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |